Produkt Beskriuwing
4h-n 4inch 6inch dia100mm sic siedwafel 1mm dikte foar ingotgroei
Oanpaste grutte / 2 inch / 3 inch / 4 inch / 6 inch 6H-N / 4H-SEMI / 4H-N SIC ingots / Hege suverens 4H-N 4 inch 6 inch dia 150mm silisiumkarbid ienkristal (sic) substraten wafersS / Oanpaste 4in-snijde substraten klasse 4H-N 1,5 mm SIC Wafers foar sied crystal
Oer Silicon Carbide (SiC) Crystal
Silisiumkarbid (SiC), ek wol carborundum neamd, is in semiconductor dy't silisium en koalstof befettet mei de gemyske formule SiC. SiC wurdt brûkt yn semiconductor elektronika apparaten dy't wurkje by hege temperatueren of hege spanningen, of beide. macht LEDs.
Beskriuwing
| Besit | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3,076 Å c=10,053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs hurdens | ≈9.2 | ≈9.2 |
| Tichtheid | 3,21 g/cm3 | 3,21 g/cm3 |
| Therm. Utwreidingskoëffisjint | 4-5 × 10-6 / K | 4-5 × 10-6 / K |
| Refraksjeyndeks @750nm | nee = 2.61 | nee = 2,60 |
| Dielektryske konstante | c~9.66 | c~9.66 |
| Thermyske konduktiviteit (N-type, 0,02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Thermyske konduktiviteit (semi-isolearjend) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3,02 eV |
| Break-Down elektryske fjild | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2,0 × 105 m/s | 2,0 × 105 m/s |
